Silicon Nitride Ceramic Substrate Sheets
High-strength Si3N4 substrate sheets for reliability-focused power electronics and severe thermal-cycling applications.
View productElectronics & Power-Module Substrate Family

Silicon nitride ceramic substrates are insulating sheets for power-electronic assemblies that combine heat transfer with mechanical loading.
Silicon nitride ceramic substrates are insulating sheets for power-electronic assemblies that combine heat transfer with mechanical loading. Strength and fracture toughness support thin ceramic sections exposed to stress from mounting and bonded copper layers.
Bare sheets and copper-clad AMB substrates are different constructions. The material table describes the bare substrate profile; copper thickness, braze system and pattern define the joined AMB stack separately.
Material & Process Filter
Only technically compatible routes are shown. Select one or more processes to compare matching products; clear the selection to return to the base-material portfolio.
Product Family Portfolio
Select a product route for detailed application and drawing-review guidance.
1 products
Ceramic strength, heat flow and the complete module construction are considered together.
Material Properties
| Property | Sinalit — bare Si₃N₄ substrate | Conditions / ±10% measurement tolerance (except ref.) |
|---|---|---|
| Density (g/cm³) | ≥3.22 | DIN EN 993-1 |
| Bending strength (MPa) | ≥700 | — |
| Fracture toughness (MPa·m½) | ≥6.5 | Indentation-fracture method |
| Thermal conductivity (W/(m·K)) | 90 | Room temperature; DIN EN 821-2 |
| Coefficient of thermal expansion (10⁻⁶/K) | 3.3 (ref.) | 100–800°C; DIN 51045-1 |
| Dielectric strength (kV/mm) | ≥25 | 20°C; AC / DC; DIN EN 60243-1 |
| Volume resistivity (Ω·cm) | ≥10¹⁴ | Room temperature; IEC 62631-3 |
| Young’s modulus (GPa) | ≥280 | ASTM C1259-15 |
| Specific heat capacity (J/(g·K)) | ≥0.68 | 25°C; DIN EN 821-3 Method B |
| Relative permittivity | 7.8 (ref.) | Room temperature; 1 MHz; Ra ≤0.4 µm; ASTM D150 |
| Dielectric loss tangent | ≤0.003 | Room temperature; 1 MHz; Ra ≤0.4 µm; ASTM D150 |
Available Specifications
Dimensions, warpage and features are reviewed together with any copper layout.
| Item | Typical format | Condition |
|---|---|---|
| Standard thickness | 0.25 and 0.32 mm for AMB power substrates | Other thicknesses available by request |
| Sheet references | 110 × 110, 114.3 × 114.3 and approximately 138 × 190.5 mm | Subject to grade and drawing review |
| Dimensional tolerance | ±0.2 mm reference | Tighter values by review |
| Flatness / warpage | Controlled to drawing | Depends on size, thickness and copper layout |
| Surface | As-fired or prepared for AMB | Application dependent |
| Laser processing | Available | Subject to thickness, edge quality and drawing review |
Product Options
The selected power-substrate grade and thickness are reviewed against thermal resistance and module reliability.
Customer-controlled integration
High-reliability insulating substrates for custom processing or metallization.
Power-module platform
Thin, tough ceramic substrates prepared for thick-copper active metal brazing.
Selection Guidance
Balance ceramic heat flow, mechanical loading and the intended copper process.
| Priority | Recommended direction | Selection reason |
|---|---|---|
| Maximum bulk thermal conductivity | Aluminum Nitride | Higher conductivity class |
| Cost-effective general substrate | Alumina | Mature and widely processed |
| Mechanical stress in bonded power substrates | Silicon Nitride | Strength and fracture toughness alongside heat transfer |
Product configuration
Laser features and metallization depend on grade, thickness, edge quality and module layout.
Quality & Inspection
Documentation and test scope are available on request and agreed before production.
Material reference
Review material behavior separately from this electronics and power-module substrate offer.
Ordering Information
Typical lead times depend on selected grade, layout, copper configuration, quantity and qualification requirements.
Recommended MOQ
5 pieces
Bare substrates
4–7 weeks
AMB configurations
6–10 weeks
FAQ
Practical sourcing questions for material selection, processing and ordering.
Silicon nitride combines heat transfer with strength and fracture toughness. Ceramic thickness, copper distribution, interfaces and operating cycles determine how those material properties contribute to a complete module.
No. This page covers flat electronic and power-module substrates, not molten-metal thermocouple protection tubes.
AMB is the priority route for high-reliability Si3N4 power modules, subject to ceramic, copper and layout review.
Recommended MOQ is 5 pieces. Bare substrates are typically 4–7 weeks and AMB configurations 6–10 weeks, depending on design and quantity.
Packaging & Shipping
Packaging protects ceramic edges and the selected copper finish.
What to Specify for RFQ
Separate bare-substrate requirements from AMB circuit requirements.
Engineering RFQ
Provide the drawing, dimensions, quantity and application requirements so the team can review material and processing options before quotation.