FreeWill Material Technical Ceramics

Silicon Carbide Ceramic Components

Silicon carbide ceramic components arranged on a neutral studio background

Product Family

Silicon Carbide Components for Wear, Sealing and Thermal Applications

Choose a silicon carbide product by its role: sealing and sliding contact, abrasive-process wear, thermal equipment or precision handling. This catalogue covers ceramic equipment parts, not SiC semiconductor chips. Select the component form below, then share the drawing and operating conditions so material route and supply feasibility can be reviewed.

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Material Overview

Silicon carbide components are selected for combinations of wear resistance, heat transfer and chemical compatibility. The material route and component geometry should be reviewed together.

Dense sintered SiC, reaction-bonded SiC and porous kiln-furniture grades have different phase compositions and properties. Specify the medium, atmosphere, full temperature cycle, mechanical loading and drawing requirements rather than selecting from a single maximum temperature.

SiC-containing foundry crucibles can include graphite and a bonding phase. They are a separate construction category from dense engineering SiC tubes, seals and plates; the material examples below are not crucible specifications.

Material Grades & Variants

Typical properties by material route.

Grade / VariantComposition / TypeKey CharacteristicsTypical Applications
RBSiC / SiSiCReaction-bonded SiC with a residual silicon phaseReaction-bonded SiC with a residual silicon phaseDensity (g/cm³): ≥3.03; Apparent porosity (%): <0.2; Vickers hardness (HV0.5): 2000 (0.5 kgf test force); Young’s modulus (GPa): 350; Fracture toughness (MPa·m¹/²): 2.5–3.5; Flexural strength (MPa): ≥350 (25°C); Compressive strength (MPa): ≥2000 (25°C); Thermal conductivity (W/(m·K)): ≥90 (25°C); Mean linear thermal expansion coefficient (10⁻⁶/K): 4.0 (25–1000°C); Typical maximum material temperature (°C): 1300Drawing-defined wear, nozzle and thermal components
SSiCPressureless-sintered dense SiCPressureless-sintered dense SiCDensity (g/cm³): ≥3.12; Apparent porosity (%): <0.2; Vickers hardness (HV0.5): 2100 (0.5 kgf test force); Young’s modulus (GPa): 400; Fracture toughness (MPa·m¹/²): 4–5; Flexural strength (MPa): ≥400 (25°C); Compressive strength (MPa): ≥2200 (25°C); Thermal conductivity (W/(m·K)): ≥110 (25°C); Mean linear thermal expansion coefficient (10⁻⁶/K): 4.0 (25–1000°C); Typical maximum material temperature (°C): 1650Sealing, wear and chemical-process components
RSiCRecrystallized porous SiCRecrystallized porous SiCSiC content (%): >99; Si₃N₄ content (%): —; Bulk density (g/cm³): 2.7; Open porosity (%): 15; Modulus of rupture (MPa): 90 (Room temperature); Thermal conductivity (W/(m·K)): 25; Mean linear thermal expansion coefficient (10⁻⁶/K): 4.8 (20–1000°C); Typical maximum material temperature (°C): 1650Kiln supports and thermal-processing components
Fine NBSiCFine nitride-bonded porous SiCFine nitride-bonded porous SiCSiC content (%): 75; Si₃N₄ content (%): 25; Bulk density (g/cm³): 2.8; Open porosity (%): 13; Modulus of rupture (MPa): 160 (Room temperature); Thermal conductivity (W/(m·K)): 15; Mean linear thermal expansion coefficient (10⁻⁶/K): 4.7 (20–1000°C); Typical maximum material temperature (°C): 1450Selected kiln-furniture and thermal-processing components

Products

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